IndiumV3, Chine, Analysis, bibRecord, 000919

Development of free-standing InGaN LED devices on Al2O3/Si substrate by wet etching

Identifieur interne : 000919 ( Chine/Analysis ); précédent : 000918; suivant : 000920

Development of free-standing InGaN LED devices on Al2O3/Si substrate by wet etching

Auteurs : RBID : Pascal:11-0457813

Descripteurs français

Pascal (Inist)
- Diode électroluminescente, Procédé voie humide, Gravure sélective, Surface sélective, Packaging électronique, Fissuration, Gauchissement, Caractéristique électrique, Composé ternaire, Nitrure de gallium, Nitrure d'indium, Alumine, Semiconducteur type p, Semiconducteur type n, Silicium, Couche mince, Fabrication microélectronique, InGaN, Al2O3.

English descriptors

KwdEn :
- Alumina, Cracking, Electrical characteristic, Electronic packaging, Gallium nitride, Indium nitride, Light emitting diode, Microelectronic fabrication, Selective etching, Selective surface, Silicon, Ternary compound, Thin film, Warping, Wet process, n type semiconductor, p type semiconductor.

Abstract

Free-standing InGaN-based LEDs grown on Al₂O₃/Si (1 1 1) have been achieved using selective area wet etching. Conventional device design was used for LED fabrication, in which p-type and n-type contacts are located at the same side of the epilayers. These LED devices were bonded to a dual in-line package (DIP), and epoxy was used to protect the front side of the epilayers as well as the bonding wires. The silicon substrate was selectively removed by wet etching while the chip was mounted in a DIP which prevented the thin film from cracking or warping. No significant change in electrical characteristics, peak emission wavelength or EL intensity versus drive current was observed. The substrate-removal process and the challenges involved are discussed. Such packaging techniques could be beneficial for commercial-scale production of InGaN-based LEDs grown on silicon substrates.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 002725
to stream Main, to step Repository: 003201
to stream Chine, to step Extraction: 000919

Links to Exploration step

Pascal:11-0457813

Le document en format XML

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O<sub>3</sub>
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<author><name sortKey="Jamil, M" uniqKey="Jamil M">M. Jamil</name>
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<affiliation wicri:level="4"><inist:fA14 i1="03"><s1>School of Electrical and Computer Engineering, Georgia Institute of Technology</s1>
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<author><name sortKey="Melton, A" uniqKey="Melton A">A. Melton</name>
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<author><name sortKey="Jampana, B" uniqKey="Jampana B">B. Jampana</name>
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<author><name sortKey="Ferguson, I T" uniqKey="Ferguson I">I. T. Ferguson</name>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Department of Electrical and Computer Engineering, University of North Carolina at Charlotte, 9201 University City Boulevard</s1>
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<sZ>5 aut.</sZ>
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<term>Electrical characteristic</term>
<term>Electronic packaging</term>
<term>Gallium nitride</term>
<term>Indium nitride</term>
<term>Light emitting diode</term>
<term>Microelectronic fabrication</term>
<term>Selective etching</term>
<term>Selective surface</term>
<term>Silicon</term>
<term>Ternary compound</term>
<term>Thin film</term>
<term>Warping</term>
<term>Wet process</term>
<term>n type semiconductor</term>
<term>p type semiconductor</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Diode électroluminescente</term>
<term>Procédé voie humide</term>
<term>Gravure sélective</term>
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<term>Packaging électronique</term>
<term>Fissuration</term>
<term>Gauchissement</term>
<term>Caractéristique électrique</term>
<term>Composé ternaire</term>
<term>Nitrure de gallium</term>
<term>Nitrure d'indium</term>
<term>Alumine</term>
<term>Semiconducteur type p</term>
<term>Semiconducteur type n</term>
<term>Silicium</term>
<term>Couche mince</term>
<term>Fabrication microélectronique</term>
<term>InGaN</term>
<term>Al2O3</term>
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<front><div type="abstract" xml:lang="en">Free-standing InGaN-based LEDs grown on Al<sub>2</sub>
O<sub>3</sub>
/Si (1 1 1) have been achieved using selective area wet etching. Conventional device design was used for LED fabrication, in which p-type and n-type contacts are located at the same side of the epilayers. These LED devices were bonded to a dual in-line package (DIP), and epoxy was used to protect the front side of the epilayers as well as the bonding wires. The silicon substrate was selectively removed by wet etching while the chip was mounted in a DIP which prevented the thin film from cracking or warping. No significant change in electrical characteristics, peak emission wavelength or EL intensity versus drive current was observed. The substrate-removal process and the challenges involved are discussed. Such packaging techniques could be beneficial for commercial-scale production of InGaN-based LEDs grown on silicon substrates.</div>
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Serveur d'exploration sur l'Indium

Development of free-standing InGaN LED devices on Al2O3/Si substrate by wet etching

Development of free-standing InGaN LED devices on Al2O3/Si substrate by wet etching

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